? 2004 ixys all rights reserved s g s d minibloc, sot-227 b (ixfn) e153432 to-264 aa (ixfk) features ? international standard packages ? encapsulating epoxy meets ul 94 v-0, flammability classification ? minibloc with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier advantages ? plus247 package for clip or spring bar mounting ? easy to mount ? space savings ? high power density g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source s g d d (tab) ds97502g(11/04) hiperfet tm power mosfet single die mosfet ixfk 55n50 ixfx 55n50 ixfn 55n50 v dss = 500 v i d25 =55a r ds(on) = 90m ? ? ? ? ? t rr 250 ns plus247(ixfx) g c e (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 500 v v gs(th) v ds = v gs , i d = 8 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 90 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c 500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c55a i dm t c = 25 c, pulse width limited by t jm 220 a i ar t c = 25 c55a e ar t c = 25 c60mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s (ixfk, ixfx) 300 c m d mounting torque (ixfk, ixfx) 1.13/10 nm/lb.in. terminal leads (ixfn) 1.13/10 nm/lb.in. v isol 50/60 hz, rms (ixfn) t = 1minute 2500 v~ i isol 1 ma t = 1 s 3000 v~ weight plus247 5 g to-264 10 g sot-227b 30 g
symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 45 s c iss 9400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1280 pf c rss 460 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 ns t d(off) r g = 1 ? (external), 120 n s t f 45 ns q g(on) 330 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 nc q gd 155 nc r thjc 0.20 k/w r thck ixfk, ixfx 0.15 k/w r thck 0.05 k/w source-drain diode (t j = 25 c, unless otherwise specified) characteristic values symbol test conditions min. typ. max. i s v gs = 0 55 a i sm repetitive; 220 a pulse width limited by t jm v sd i f = 100 a, v gs = 0 v note 1 1.5 v t rr 250 ns q rm i f = 25 a, -di/dt = 100 a/ s, v r = 100 v 1.0 c i rm 10 a m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc (sot-227b) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline notes: 1. pulse test, t 300 s, duty cycle d 2 % ixfk55n50 ixfx55n50 ixfn55n50 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 terminals: 1 - gate 2 - collector plus247 outline
? 2004 ixys all rights reserved t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 10 20 30 40 50 60 t j - degrees c 25 50 75 100 125 15 0 r ds(on) - normalized 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v gs - volts 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i d - amperes 0 20 40 60 80 100 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 10 20 30 40 50 60 i d - amperes 0 20 40 60 80 100 120 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v ds - volts 0 4 8 12 16 20 24 i d - amperes 0 20 40 60 80 100 v ds - volts 0 4 8 12162024 i d - amperes 0 20 40 60 80 100 120 140 5v v gs = 10v v gs = 10v 9v 8v 7v t j = 125 o c v gs = 10v t j = 25 o c 6v 6v 5v t j = 25 o c i d = 55a t j = 125 o c t j = 125 o c v gs = 10v 9v 8v 7v i d = 27.5a i d - amperes 0 20 40 60 80 100 120 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v gs = 10v v gs = 10v t j = 25 o c t j = 25 o c t j = 125 o c ixf_55n50 ixf_50n50 t j = 25 o c figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j figure 5. drain current vs. case temperature figure 6. admittance curves ixfk55n50 ixfx55n50 ixfn55n50
figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance gate charge - nc 0 50 100 150 200 250 300 350 v gs - volts 0 2 4 6 8 10 12 v ds = 250v i d = 27.5a v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 crss coss ciss f = 1mhz v sd - volts 0.2 0.4 0.6 0.8 1.0 i d - amperes 0 20 40 60 80 100 t j = 125 o c t j = 25 o c ixfk55n50 ixfx55n50 ixfn55n50 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.00 0.01 0.10 1.00 ixfk55n50/ixfx55n50 ixfn55n50
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